发明名称 METHOD FOR SETTING CONDITION IN CVD DEVICE
摘要 PURPOSE:To set easily, surely and most adequately conditions for the flow of gas and to form a uniform film by observing the flow of the microparticles contained in the gas flowing in the reaction chamber of a CVD device and obtaining the information on the flow of the gas. CONSTITUTION:The liquid of TiCl4 in the vessel 5 of a gas supply system B is evaporated by an inert gas such as He supplied from a cylinder and is introduced into the reaction chamber A of the CVD device provided with a substrate holder 2 for holding the substrate 1 and a perforated plate 3 for ejecting the gas; at the same time, water 6 is supplied in the form of steam by a heater 7 and is mixed with the vapor at the inlet of the plate 3 to form many pulverous particles of TiO2. Such particles are admitted together with the inert gas into the vessel and are discharged through a discharge port 4 by a discharging system C. On the other hand, the light from a light source 15 of an illuminating system D is passed through lenses 16, 17 and a slit 17 to illuminate the inside of the chamber A through transparent glass 19 as the plane rays. The locus of the flow of the above-mentioned pulverous TiO2 particles is visually observed or subjected to image pickup, by which the information on the flow of the gas is obtd.
申请公布号 JPS6134179(A) 申请公布日期 1986.02.18
申请号 JP19840152945 申请日期 1984.07.25
申请人 HITACHI LTD 发明人 YAMAGUCHI YASUHIRO;ITO FUMIKAZU;SAITO YUTAKA;AIUCHI SUSUMU
分类号 C23C16/44;C23C16/455;C23C16/52 主分类号 C23C16/44
代理机构 代理人
主权项
地址