| 摘要 |
PURPOSE:To provide high sensitivity to ionized radiation and to form accurately a fine pattern having superior dry etching resistance by using a specified polymer. CONSTITUTION:A polymer (PCMS) having repeating structural units represented by formula I, II or III [where R is an aryl group having at least one nitro substituent and X is -(CnH2n)-(n=0-6)], that is, chloromethylstyrene units is used. A resist contg. PCMS is sensitive to various kinds of radiation such as ultraviolet rays, far ultraviolet rays, X-rays, electron beams and molecular beams. The resist is made insoluble when irradiated with such radiation, and it is suitable for use as a resist requiring especially high resolution in the production of a semiconductor integrated circuit, a liq. crystal substrate or the like. |
