| 摘要 |
PURPOSE:To enable the effective formation of minute mask patterns by arranging a step ped part of the predetermined width and depth in the circumferential part of a semiconductor substrate. CONSTITUTION:Resist is spread over a surface of the semiconductor crystal substrate 1 which is selected out of the group consisting of Si, Ge, VI-semiconductor, III-V compound semiconductor and mixed crystal thereof, and II-VI compound semiconductor and mixed crystal thereof. The substrate is irradiated with ultraviolet rays through the predetermined photomask and printing of a mask pattern, development, rinsing, and drying are carried out to form a resist pattern 3. The exposed part in the circumferential part is removed by etching to form a step ped part 5 of 1-2mm. width and 50-100mum depth. As a result, when a resist film 6 for photo-etching is formed, there is no swelling of the resist and inclination of the substrate surface because of tension of the resist existing in the stepped part and the uniform pattern without distortion can be formed easily. |
