| 摘要 |
PURPOSE:To allow the titled device to be excellent in bondability and show a high corrosion resistance in the state of being sealed by plastic molding by a method wherein metallic wiring bands between elements or in elements are formed on an aluminum alloy containing noble metal. CONSTITUTION:Metallic wiring bands between semiconductor elements or in the elements are formed of an alluminum alloy containing a kind or more of noble metal. Said noble metal should be a kind or more from among e.g. palladium and platinum: the noble metal contained in the aluminum alloy is dissolved in a grain or in a grain boundary, not forming the intermetallic compound with aluminum, or is made to deposit the intermetallic compound with a grain size of 0.3mum or less by uniform dispersion in the grain or over the grain boundary. This manner yields the titled device of resin-sealed type excellent in bondability having a high corrosion resistance against chlorine ions or high-temperature vapor. |
