发明名称 RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the deterioration in moisture resistance or reliability due to the thrust of filler to the passivation film, and to prevent the variation of transistor characteristics by lessening the stress which the filler gives to elements, by a method wherein the titled device is so constructed that the filler and the passivation film do not come into direct contact. CONSTITUTION:The filler 9 is kept away from the interface between the passivation film 8 and epoxy resin 6: that is, an epoxy resin layer 6a of (d) thickness on the passivation film 8 is a layer containing no fillers 9; further, an epoxy resin layer 6b thereon is an epoxy resin composite layer in which fillers 9 are compounded. This construction can prevent the fillers 9 from thrusting into the passivation film 8 under a pressure A at the time of resin sealing. Such a structure can be obtained by sealing in two times of resin sealing process first with only an epoxy resin and second with a resin composite of an addition of the filler 9 to the epoxy resin.
申请公布号 JPS6132448(A) 申请公布日期 1986.02.15
申请号 JP19840156008 申请日期 1984.07.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 MASUKO KOICHIRO
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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