| 摘要 |
PURPOSE:To enable the measurement of patterning during a photoresist process with high accuracy and facility by using an optical microscope without using a special measuring device by composing of two rectangular reference patterns and the measured pattern of equilateral triangle or isopod trapezoid pattern. CONSTITUTION:The rectangular reference patterns 2 and 3 are formed in parallele to each other during the first photoresist process. During the second photoresist process, the measured pattern 1 of isopod trapezoid or equilateral triangle is so formed that it crosses the longitudinal sides 22 and 23 of the reference patterns 2 and 3 by the equal angles 6. The reference patterns 2 and 3 shift to 2' and 3' and the measured pattern 1 shifts to 1' due to the deviation produced at side etching or positioning of a mask. The shift quantities 7 and 8 of the crossing points 4 and 5 of the patterns 2 and 3 with the measured pattern 1 are read by an observation with a microscope and the difference 9 in size of the measured pattern between that of design and that on a substrate which is actually formed can be worked out by the predetermined equation regardless of the shift quantity 10 of the reference patterns 2 and 3. |
