| 摘要 |
PURPOSE:To enable operation at high speed, and to integrate the titled light- emitting element with one or more of elements on the same base body by selectively executing impurity diffusion or etching to multilayer semiconductor layers formed onto the base body while shaping the elements to a planar form. CONSTITUTION:On a phototransistor, a layer such as an n type InP collector one 402, a layer such as a p type GaInAsP base one 403 and a layer such as an n type InP emitter one 404 are grown onto a base body such as an n type InP one 401 in an epitaxial manner in succession, and two grooves formed through chemical etching are buried by p type InP 405. Regions 406 to which an n type impurity such as sulfur is diffused are shaped to mesas on the outsides of the grooves, and electrodes 407 are formed to the upper sections of the regions 406 and used as collector electrodes. The p type InP buried layers 405 are employed as graft bases, and currents are injected to the base layer 403 by electrodes 408. An electrode 409 is shaped to an emitter layer. In the constitution, electrodes for a base, an emitter and a collector are all formed on the surfaces of elements, and the grooves are buried by the buried layers 405, thus forming the planar type element. |
