| 摘要 |
PURPOSE:To obtain the titled element which performs high-performance action by a method wherein a required substrate is provided with an amorphous or polycrystalline semiconductor layer, and the current in the state of non-conduction is restricted by a potential barrier, using a metallic film having a higher potential barrier than that of this substrate for source-drain electrodes. CONSTITUTION:The TFT active region is formed by patterning an a-Si 16. Next, a Cr film 17 is deposited by oblique evaporation so that step cuts may generate at the gate edge; then an Al film is evaporated. Heating is carried out in such a manner than the potential barriers of the a-Si 16 and the Cr film become stronger. The pattern is formed, and a source electrode 18 is formed by etching only the Al film with phospho-nitric acid. A source contact electrode 17 self-aligned with a gate insulation film 15 by utilizing step cuts at the gate edge is protected with resist, and the Cr film at unnecessary parts is removed with ammonium ceric nitrate. Finally, the insulation film 13 at the drain electrode 12 lead-out is removed. |
