| 摘要 |
PURPOSE:To enable the prevention of electrostatic breakdown by a method wherein a protection element and an oxide film capacitor absorb surge voltage with each other by connecting the upper electrode of the oxide film capacitor to the emitter region of the protection element, and the lower element to the collector region of the protection element. CONSTITUTION:An NPN type transistor 2 and the oxide film capacitor 3 are formed in an island region 14, and an NPN type transistor 7 as the protection element is formed in an island region 15. Then, the upper electrode 23 of the oxide film capacitor 3 is connected to a base electrode 24 in ohmic contact with the base region 17 of the transistor 2; and the lower electrode of the oxide film capacitor 3 is connected to the collector of the transistor 2 by leading out a collector electrode 25 to an emitter diffused region 30 as the ohmic contact. Further, the upper electrode 23 of the capacitor 3 is connected to an emitter electrode 26 in ohmic contact with the emitter region 20 of the transistor 7, and the lower electrode 25 of the capacitor 23 is connected to the collector electrode 27 in the collector contact region 21 of the transistor 7. |
