| 摘要 |
PURPOSE:To ensure the connection of the first layer metallic wiring to the second layer metallic wiring, or the first layer metallic wiring to semiconductor elements on a semiconductor substrate by simple processed by a method wherein contact holes or through holes are filled with conductive coating material. CONSTITUTION:The first layer metallic wiring 2 is formed on the semiconductor substrate 1 containing devices such as transistors. Thereafter, an interlayer insulation film 3 is deposited, and through holes 6 are opened. Next, the second layer metallic wiring 4 is formed. Since the through hole 6 yields a high aspect ratio and easily generates disconnections because of poor step coverage, the through hole section 6 is filled with a conductive coating material 5. For example, Ag paste with Ag fine particles dissolved in a solution of butyl acetate is used as this conductive coating material 5. Another material, for example, the colloid of a noble metal such as Cu, Ni, Ti, W, Pt, Pd, or Au can be used. Afterwards, the conductive coating material 5 and the second layer metallic wiring 4 are patterned by photoetching technique. |
