| 摘要 |
PURPOSE:To obtain a semiconductor device, a pattern for a load resistor in a bipolar IC section thereof is designed easily and which can be formed through a simple manufacturing process, by constituting at least one part resistor of a resistor used for the semiconductor device by a diffusion layer shaping a source and a drain in a MOS element. CONSTITUTION:Phosphorus is driven to a P type silicon substrate 10 while using a photo-resist as a mask, and activated electrically to shape an N well 11 as a P channel region in a MOS transistor and an N well 12 as a collector regiol in a bipolar transistor. Boron ions are implanted while employing photo-resists 14 and silicon nitride films 13 as masks to form channel stoppers 15. Boron ions are implanted into source and drain regions 21 in a P channel transistor, a low resistance diffusion region 22 in a bipolar IC load resistor and a region as a P<+> diffusion layer 23 for reducing the base resistance of an N-P-N transistor while using aluminum, etc. as masks. Aluminum is removed, and boron ions are activated electrically and diffused up to desired depth. |
