| 摘要 |
PURPOSE:To form a Schottky FET having excellent positional accuracy and stable characteristics with superior workability by forming a heat-resistant resist pattern for shaping a gate electrode and forming a source electrode and executing etching for isolating an electrode and heat treatment while using the resist pattern as a mask. CONSTITUTION:An n type GaAs epitaxial layer 12 is formed onto a semiinsulating GaAs substrate 11. A first photo-resist pattern 13 having a predetermined shape is formed onto the GaAs substrate 11, and mesa-etched while leaving a functional section for an element. The first photo-resist pattern 13 is removed, and a second photo-resist pattern 14 is shaped. A third photo-resist pattern 16 is formed by using a heat-resistant polyimide resin, and an Au/Ni/AuGe thin-film 15 in a gate section is removed through etching, and divided into a source electrode 17 and a drain electrode 18. The whole is thermally treated for several min under the state in which the third resist pattern 16 is left as it is. A recess 19 in desired depth is shaped through recess-etching. |
