| 摘要 |
PURPOSE:To taper a film to be etched with excellent reproducibility and controllability by a method wherein, when a device with parallel flat sheets is impressed with high frequency voltage to produce plasma for etching process, a no tapered mask formed on the device simultaneously with the film to be etched is isotropically dry-etched. CONSTITUTION:A film 42 to be etched is formed on a silicon substrate 41 and then a resist pattern 43 0.8mum thick is formed on the film 41. Next the surface of film 42 is etched successively as shown by the broken lines since the no tapered resist pattern 43 is etched simultaneously in both vertical and horizontal directions (isotropically). At this time, the film 42 may be tapered at around 30 deg. by means of making the etching rate of resist pattern 43 almost twice comparing with that of film 42 0.6mum thick made of SiO2. |
