| 摘要 |
PURPOSE:To effect the enhancement of reaction velocity or the efficient removal of unnecessary reaction products by arranging a filament of heating catalizer in the region where hydrogen gas is introduced in the device for CVD or etching which uses light excitation reaction. CONSTITUTION:An Si wafer 2 is arranged in a reaction chamber 1 and a main reactive gas is introduced from a gas introducing hole 5. Infrared rays from a CO2 gas laser 4 are projected to a surface of wafer 2 though a light introducing window 3. A thin plate 7 of W or Pt is arranged in the vicinity of a hydrogen gas introducing hole 6 and it is heated to a high temperature by infrared rays lamp 8. When SF6 is used as the main reactive gas for etching Si, S becomes HzS and is exhausted. As S is not deposited, it can be prevented that the surface of wafer 2 and the inner wall of chamber 1 are contaminated by S. Also as the surface of substrate is not convered by S, the etching velocity for Si is improved. |
