发明名称 SEMICONDUCTOR FUSE ELEMENT
摘要 PURPOSE:To obtain an element, which has high reliability and is fusion-cut easily, by constituting a connecting hole by at least two connecting holes of a first connecting hole formed extending over a fusion cutting section and a second connecting hole shaped isolated from the first connecting hole. CONSTITUTION:Connecting holes 15a and 15b reaching to connecting sections 3b for a polycrystalline silicon fuse 3 are formed to an interlayer insulating film 4, and an opening 6 reaching to a fusion-cutting section 3a is formed. A wiring metallic layer 7 is shaped onto the interlayer insulating film 4, the fuse 3 is connected to an external circuit by the wiring metallic layer 7 through the connecting holes 15a and 15b, and a protective insulating film 8 is formed onto the wiring metallic layer 7. Consequently, since the connecting holes 15 are shaped extending over the upper section of the fusion cutting section 3a of the polycrystalline silicon fuse 3, resistance is represented substantially by contact resistance in the connecting holes 15a. Accordingly, voltage and currents required for fusion cutting are reduced, and fusion cutting is facilitated. The connecting holes 15b are formed, thus compensating structure in which a margin through which the connecting holes 15a electrically connect with high reliability is not shaped, then ensuring connection having reliability.
申请公布号 JPS6132551(A) 申请公布日期 1986.02.15
申请号 JP19840154812 申请日期 1984.07.25
申请人 NEC CORP 发明人 OGAWA HISAO
分类号 H01L27/10;H01H37/76;H01H85/00;H01L21/82 主分类号 H01L27/10
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