| 摘要 |
PURPOSE:To reduce the film thickness of a channelling preventive film on the upper surface of a gate electrode, and to prevent an exposure to plasma of an silicon substrate in source and drain regions by interposing an silicon film between a gate electrode film and an insulating film. CONSTITUTION:A tungsten film 3 is formed onto an silicon substrate 2 with an silicon oxide film 1, and phosphorus silicate glass 4 is shaped in order to prevent channelling on ion implantation. Phosphorus silicate glass 4 and the tungsten film 3 are processed to a predetermined shape through a reactive sputtering etching method using a SF6 group gas while employing a photo-resist 5 as a mask, and the photo-resist 5 is removed. Phosphorus ions are implanted to form an N layer 7. An silicon film 6 is shaped, and phosphorus silicate glass 4 is formed. Phosphorus silicate glass 4 is etched in an anisotropic manner through the reactive sputtering etching method using a CF4 group gas. Arsenic ions are implanted while employing gate structure with the side wall of phosphorus silicate glass 4 as a mask to shape an N<+> layer 8. The silicon film 6 is oxidized through heat treatment in a hydrogen atmosphere containing water. |
