| 摘要 |
PURPOSE:To form the source-drain in self-alignment with the gate electrode in a coplanar TFT by a method wherein an N type amorphous Si layer is deposited on a gate insulation film and a gate electrode, and source-drain electrodes are formed by removing the N type amorphous Si layer on the gate electrode by lift-off. CONSTITUTION:An Si nitride film 9, an I type amorphous Si film 10, and an Si nitride film 11 are deposited on a light shielding film 8. Further, Cr12 is deposited thereon and three layers excluding the Si nitride layer 9 of the lowest layer are processed at the same time. Thereafter, this Cr film, and the Si nitride film immediately thereunder are etched by photoetching into the gate electrode 12 and the gate insulation film 11. Next, an N type amorphous Si film is deposited with the photo resist film remaining. Then, source-drain contact layers 13 in alignment with the gate are formed by removal of the resist. Annealing is performed and further the N type amorphous Si layer at the unnecessary part is removed; afterwards, Cr and Al are deposited in this order and formed into source-drain electrodes 14 and part 14 of the gate electrode by photoetching. |
