SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To reduce an area required for a resistance element formed by a polycrystalline silicon film, and to improve the degree of integration of a semiconductor integrated circuit device by forming the polycrystalline silicon film not treated with phosphorus and introducing an impurity shaping a source region and a drain region in a MISFET to the polycrystalline silicon film. CONSTITUTION:An impurity 13A is extended and diffused to form an n<-> type semiconductor region 13. A conductive layer 5C treated with phosphorus is shaped in a memory cell forming region MC, and conductive layers 5D not treated with phosphorus are shaped in a MISFET forming region CM for controlling voltage and a resistance-element forming region R. A p type impurity 7B is introduced to the main surface sections of the conductive layers 5d penetrating insulating films 15, and the impurity 7B is extended and diffused to form p<+> type semiconductor regions 7, 7C and a conductive layer 5 as a resistance element R. The resistance element R is shaped by introducing the impurity 7B for forming a source region and a drain region in a p channel MISFET Qp to the conductive layer (a polycrystalline silicon film) 5D not treated with phosphorus.