发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A CONNECTION STRUCTURE |
摘要 |
In a semiconductor device including a connection structure comprising a first conductive layer 14 formed in or on a semiconductor substrate 11, a second conductive layer 15 arranged adjacent the first conductive layer 14, and a third conductive layer 17 connecting the first conductive layer 14, and to the second conductive layer 15. The third conductive layer 17 is in contact with the first 14 and second 15 conductive layers in a contact region 16 min . One dimension of the portion of the second conductive layer 15 in the contact region 16 min varies which enables the size of the contact region 16 min to be reduced whilst still ensuring a positive connection between the first 14 and second 15, conductive layers even in the event of their misregistry. |
申请公布号 |
EP0100166(A3) |
申请公布日期 |
1986.02.12 |
申请号 |
EP19830303915 |
申请日期 |
1983.07.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
YAMAUCHI, TAKAHIKO;SEKI, TERUO;AOYAMA, KEIZO |
分类号 |
H01L23/522;H01L21/768;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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