| 摘要 |
<p>Apparatus is provided for periodically reading image intensity information from M rows x N columns of charge storage sites in a CID array imager. The magnitudes of signal charges collected at the sites in response to incident radiation are sensed by measuring changes in potential on column lines connected to the respective columns of sites. These changes in potential are caused by sequentially applying specific potentials to row lines connected to the respective rows of sites to effect injection of the signal charges into the substrate of the array. The apparatus operates to minimize charge transfers within the array during readout and is thus capable of accurately determining the magnitude of signal charges in arrays fabricated from semiconductor materials having low charge transfer efficiencies. The apparatus includes means for eliminating the effects of thermal (KT/C) noise from output voltages representative of the signal charge magnitudes.</p> |
