| 摘要 |
PURPOSE:To obtain a semiconductor substrate having excellent insulation property and anti-corrosion characteristic by covering the surface of underlayer metal in thermal expansion coefficient of 10X10<-6>cm/cm deg.C or less with amorphous layer through a film of fine crystal of ceramics. CONSTITUTION:An underlayer metal having thermal expansion coefficient of 10X10<-6>cm/cm deg.C is formed with a composite substance of Cu and Cu alloy and 42 alloy, kovar, W, Mo or sintered body of these powders, and Al2O3, MgO, SiO2, SiC, Si3N4, BN, AlN or fine crystal film and amorphous film of composite substance of these are stacked under the different film forming conditions with the vacuum deposition method, etc. In this case, the fine crystal film should have the ceramic grin size of 1/2 the film thickness and the film thickness is set to 2-10mum. Thereby, stable and uniform growth of fine crystal grains can be attained and thickness of amorphous film is set to 1-10mum. Crack and exfoliation can be prevented and total thickness of ceramic film is set to 3mum or more. The substrate having such structure does not show deterioration of insulation property during formation of conductive circuit and operation under wet ambient and has excellent thermal conductivity and corrosion proof characteristic. |
