| 摘要 |
PURPOSE:To provide a cell-array with a high integration rate, by providing with a high melting-point metal silicide on the surface of a source diffusing region or on the surface of a diffusing wiring region connected to the source diffusing region, in an MOS type nonvolatile memory transistor which can write by flowing current across the source and drain. CONSTITUTION:On a P type Si substrate 21, a gate oxidation film 22, a floating gate electrode 23 of polycrystalline Si, an inter-gate insulating film 24, and a control electrode 25 of polycrystalline Si are sequentially formed. Next, a drain region 26, a source region, and a source common diffusing layer wiring region 27 are formed by implanting As ions, and the surface of the memory transistor and the diffusing region is covered with an SiO2 film 28. Thereafter, through the film 28 on the region 27, a slit 29 is bored, in which Ti is coated with sputtering and annealed in an N2 atmosphere, for the purpose of creating a Ti silicide layer 30 only on the Si surface being exposed in the slit 29 to reduce layer resistance considerably. |
