| 摘要 |
PURPOSE:To obtain required vertical wiring by a method wherein, when a metallic wiring is formed on the surface or concave section of a semiconductor substrate, an insulator film is formed on the surface of the substrate and the insulator film is formed an aperture by etching, while a resist film is used as a mask. CONSTITUTION:An SiO2 film 102 and a resist film 103 are laminated and formed on the whole surface of a semiconductor substrate 101 on which transistors and the like are formed, and a prescribed aperture 104 is provided in the film 103 by photo-etching. Consequently, an aperture 104', whose size is the same as the aperture 104, is provided on the film 102 by dry-etching while the remained film 103 is used as a mask, and an Al film to be wiring is adhered in a state of isolating between the inside of the aperture 104' and the upper side of remained film 103. Thereafter, an Al film 105 is remained only inside the aperture 104' and both the film 103 and the film 105' thereon are removed, thus required patterned Al wiring film 105, which is filled up inside the film 102, is obtained. |
