FIELD EFFECT TRANSISTOR FOR INTEGRATED CIRCUITS

摘要

A field effect transistor for integrated circuits has an n-type semiconductor layer, an amorphous silicon region which is formed on a prospective gate region of a major surface of the n-type semiconductor and which contains at least boron, a metal layer deposited on the amorphous silicon region so as to constitute a gate electrode together with the amorphous silicon region, and source and drain electrodes formed on those portions of the major surface of the n-type semiconductor layer which are located at the two sides of the amorphous silicon region.