发明名称 Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor
摘要 A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C1, C2 . . . CN), each in series with an SCR switch S1, S2 . . . SN). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.
申请公布号 US4570212(A) 申请公布日期 1986.02.11
申请号 US19820447483 申请日期 1982.12.07
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 EDWARDS, DEAN B.;RIPPEL, WALLY E.
分类号 H02M7/521;(IPC1-7):H02M7/515;H02H7/122 主分类号 H02M7/521
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