发明名称 Dynamic random-access memory
摘要 A dynamic memory is capable of performing an internal charge storing refreshing operation with a low power consumption. The memory comprises an inverter for receiving a signal from the outside. The inverter is composed of an input transistor and a load circuit whose ability to feed a current to the input transistor is controllable and is made smaller during the internal refresh operation.
申请公布号 US4570242(A) 申请公布日期 1986.02.11
申请号 US19820436991 申请日期 1982.10.27
申请人 NIPPON ELECTRIC CO., LTD. 发明人 NAGAMI, AKIRA
分类号 G11C11/403;G11C11/406;G11C11/407;(IPC1-7):G11C11/40 主分类号 G11C11/403
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