发明名称 |
Dynamic random-access memory |
摘要 |
A dynamic memory is capable of performing an internal charge storing refreshing operation with a low power consumption. The memory comprises an inverter for receiving a signal from the outside. The inverter is composed of an input transistor and a load circuit whose ability to feed a current to the input transistor is controllable and is made smaller during the internal refresh operation.
|
申请公布号 |
US4570242(A) |
申请公布日期 |
1986.02.11 |
申请号 |
US19820436991 |
申请日期 |
1982.10.27 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
NAGAMI, AKIRA |
分类号 |
G11C11/403;G11C11/406;G11C11/407;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/403 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|