| 摘要 |
A high power, high voltage linear field effect transistor amplifier apparatus utilizing an automatic gate biasing network to normalize the gate threshold voltages of a plurality of field effect transistors which are in either series or parallel. Thus, these series or parallel combinations of field effect transistors may be operated as linear devices. A high-voltage, high power, wide-band carrier controlled linear amplifier is provided by utilizing an oscillator as a driver.
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