| 摘要 |
PURPOSE:To make S diffuse in an InP series compound semiconductor without deteriorating the surface of a substrate by using impurity doped silica glass and sealed tube method. CONSTITUTION:A sample 6 has a deposition of P-dopes silica glass 9 approx. 1,000Angstrom thick on a deposition of S-doped silica glass 8 approx. 1,000Angstrom thick on a semiinsulating Fe-doped InP substrate 7. In the S-doped silica glass 8, a solute in an ethanol series solvent is spin-coated for 30sec at approx. 5,000r.p.m. and then baked. The P-doted silica glass 9 is deposited by CVD. The sample sealed in a tube in this way is heat-treated for 10hr at 700 deg.C and an excellent P-N junction can be formed at the position of the diffusion of 1mum deep. |
