| 摘要 |
PURPOSE:To make it feasible to check a specified line within a short time by a method wherein a dimension checking pattern is composed of multiple lines with different width and a standard identification pattern designating etching specified line. CONSTITUTION:A dimension checking pattern 10 is composed of multiple lines A-D with different width and a standard identification pattern 12a designating a specified line specifying etching amount. This checking pattern 10 is formed of a mask pattern 11 provided with another identification pattern 12 and multiple lines A, B,...F. If e.g. a polysilicon film on an SiO2 film is etched utilizing the mask pattern 11, the checking pattern 10 is formed. At this time, it may be discerned at a glance that etching process is finished as specified since the identification pattern 12a is removed by etching process down to the specified line E. |
