| 摘要 |
PURPOSE:To greatly improve reliability involving the lower portion of contact hole side walls by a method wherein a first wiring layer is formed thick in the lower portion of a contact hole for the prevention of reaction. CONSTITUTION:An insulating layer 21 is formed on an Si substrate 20 for use for an integrated circuit and then a contact hole 24 is provided. The wiring layer in the contact hole 24 is to be of a multilayer construction including two or more layers composed of metals, alloys, metal silicides, or metal nitrides. For example, a first wiring layer 22 is formed of W by the bias spattering method at a re-spattering rate of 50% and then a second wiring layer 23 is formed of an Al-3% Cu alloy under the same conditions and by the same method. The first layer 22 at the lower portion B of the side walls in the contact hole 24 is 4-5 times thicker than one built by the conventional spattering method, which greatly contributes to the prevention of reaction between the Si substrate 20 and the second wiring layer 23. |
