| 摘要 |
PURPOSE:To enable to directly form an arbitrary oxide film pattern in high efficiency without using a photo mask and a photo resist by a method wherein an energy beam is irradiated on the semiconductor substrate applied with an oxidizing agent while the energy beam is scanned on the substrate and an oxidation is selectively performed on a part of the substrate according to an existence of the oxidation. CONSTITUTION:Oxidizing agent paste 33 is applied on the surface of a silicon substrate 31, the temperature of the surface is held being risen, an electron beam 34 is selectively irradiated, the oxidizing agent 33 at the irradiated part and the silicon substrate 31 are caused to react, and moreover, the unreacted oxidizing agent is removed to selectively obtain a silicon oxide film pattern 32 on the silicon substrate 31. This method can generate an oxidation reaction even when the interior of the device is held in an evacuated state, the efficiency of the electron beam 34 is good, and this method is specially effective in such the case that it is needed to obtain a fine pattern, because the beam becomes easier to narrow. Moreover, since the temperature of the surface of the substrate 31 is held being risen in some degree, the energy amount of the electron beam can be lessened as small as the component of the temperature being risen compared to that in the case the temperature of the surface is not being risen, thereby enabling to narrow the beam finer. |
