发明名称 MANAGING METHOD FOR SEMICONDUCTOR DEVICE MANUFACTURING PROCESS
摘要 PURPOSE:To evaluate a manufacturing process as to cleanliness in a highly sensitive, nondestructive way by a method wherein a quartz object to be used for the diffusion of impurity into a silicon substrate to be used for the manufacture of a semiconductor device or the like is subjected to radiation and the change in color produced by the radiation is studied. CONSTITUTION:X-ray are thrown upon a quartz object such as a tube or jig that is the test specimen and the resultant coloring is observed by the naked eye. Such coloring is attributable to impurities present in the quartz. For example, a test piece that is a quartzs plate not containing impurities is accommodated for a certain period of time in a heat treatment furnace for use in an impurity- diffusion process, and then taken out to be subjected to X-ray radiation. A study of the degree, tone, and density of the coloring reveals the degree of contamination inside the heat treatment furnace and the type of the contaminant responsible for the coloring.
申请公布号 JPS6127651(A) 申请公布日期 1986.02.07
申请号 JP19850058372 申请日期 1985.03.25
申请人 HITACHI LTD 发明人 ISHIWARI SHUICHI;KONISHI HIDEAKI
分类号 G01N23/00;G21H5/00;H01L21/66 主分类号 G01N23/00
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