| 摘要 |
PURPOSE:To obtain a compound semiconductor layer of good characteristics by providing a buffer layer of compound semiconductor at low temperature by which migration of atoms of the III-V compound semiconductor is impossible after treating an Si substrate at 800 deg.C or over and then growing the same semiconductor layer at an usual temperature. CONSTITUTION:An Si substrate is treated at 900 deg.C for 5-10min by flowing H2. Nextly the temperature is reduced to 400-600 deg.C while flowing H2 and arsine and trimethyl garium are flown into the H2 to arrange a GaAs buffer layer on (100) plane of the Si substrate. At that temperature, the composing atoms can not migrate on a crystal surface sufficiently. After a buffer layer of about 2,000Angstrom thick or under is arranged, arsine and H2 are flown and the temperature increases to 700-750 deg.C in 5-10min, during which annealing is done. After the annealing, trimethyl garium is flown again on the buffer layer at 700- 750 deg.C to grow GaAs. By this constitution, a III-V compound semiconductor of good crystallizability can be formed continuously on the Si substrate with including the buffer layer and it is advantagesous for the electric power element using a compound semiconductor in heat dissipation. |
