| 摘要 |
<p>An electron interferometer device includes a heterojunction comprised by first (1, 2) and second (5, 6) semiconductor materials, the first material having a greater band gap than the second material. The first semiconductor material provides a pair of conductive paths (9, 10) closely adjacent to the interface (3) of the heterojunction and connected in parrel. A gate electrode (12) is used to impress a localised electric field through one (9) of the conductive paths in a direction perpendicular to the heterjunction in order to change the electron wavelength in that conductive path. </p> |
