| 摘要 |
The first metal interconnect layer of a multilayer integrated circuit is produced by depositing a first metallization layer of aluminium copper (12) followed by depositing a second metallization layer of pure aluminium (16) on top of the aluminium copper (12). This reduces the stress related defects such as micropits and microvoids. Alternatively the first metallization layer may comprise aluminium silicon, aluminium copper silicon, titungsten or a silicide thereof, and the second metallization layer may comprise any conductive metal, but should be of different composition from that of the first metallization layer. <IMAGE> |
