| 摘要 |
PURPOSE:To obtain germanium thin film crystal having improved surface smoothness, by piling successively a layer consisting of boron nitride, etc., a layer consisting of germanium, and a layer consisting of boron nitride, etc. on a substrate of dielectric material, heat-treating it. CONSTITUTION:The first layer consisting of at least one of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide is piled on a substrate of dielectric material. Then, the second layer consisting of germanium is piled on the first layer, and the third layer consisting of at least one of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide is piled on the second layer. Then, the whole substrate of dielectric material having piled the first, the second, and the layers is heated or it is partially heated along the second layer, to give the aimed germanium thin film crystal. |
