发明名称 DEFECT DETECTOR CIRCUIT OF GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To immediately detect the damage of a GTO thyristor by comparing a reverse bias voltage between the gate and the cathode of a GTO thyristor with the OFF command signal of a gate drive circuit during OFF period of the thyristor. CONSTITUTION:In a defect detector 3, a voltage comparator 301 detects the presence or absence of a reverse bias between the gate and the cathode of a GTO thyristor 1, the output signal of the comparator 301 is input together with an OFF command signal of the thyristor 1 to an exclusive OR circuit 303, and the output is fed through a film circuit to a voltage comparator 307. If the reverse bias voltage is not present between the gate and the cathode even if the OFF command signal is present, a light emitting diode 313 is fired.
申请公布号 JPS6126463(A) 申请公布日期 1986.02.05
申请号 JP19840148220 申请日期 1984.07.17
申请人 FUJI ELECTRIC CO LTD 发明人 KOSAKA KENJI
分类号 H02M1/00;H02M1/06;(IPC1-7):H02M1/06 主分类号 H02M1/00
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