| 摘要 |
<p>A fast, low power integrated circuit logic is provided which is particularly suited for integration with high electron mobility substrates such as gallium arsenide (GaAs) or indium phosphide (InP). A forward biased Schottky diode (56) serves as the nonlinear logic element and is used to switch a field effect transistor (62). This FET (62) is preferably a depletion mode metal-semiconductor field effect transistor (MESFET). A reverse biased Schottky diode (58) is connected in parallel with the forward biased Schottky diode (56) to improve circuit performance, and in particular, switching speed. Alternatively, if the switching speed is held constant, the present invention dissipates less power than similar logic circuits which do not employ the reverse biased Schottky diode (58).</p> |
