Patterning of polyimide films with far ultraviolet light

摘要

A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.