P TYPE LAYER FORMING METHOD OF P-I-N TYPE SOLAR BATTERY USING ALPHA-SI

摘要

PURPOSE:To form the P type layer of a P-I-N type solar battery having no In diffusion from a transparent electrode by reactively sputtering hydrogen gas or mixed gas of hydrogen and helium, and forming an alpha-Si(H) layer by C-Si target doped with boron. CONSTITUTION:A film made of microcrystal having approx. 170Angstrom of particle size is formed on an ITO substrate 5 by reactively sputtering with mixed gas of hydrogen gas and helium as sputtering gas by using a P type Si target doped with boron as a sputtering target 4. Thus, a P type layer made of a layer having a morphology deposited with alpha-Si(H) layer of -Si=H2 or -SiidenticalH3 on the surface of a boron doping C-Si film of approx 170Angstrom of particle size and having an excellent film material in which In contained in a transparent electrode is diffused in the P type layer can be formed.