发明名称 CORRECTING METHOD OF DEFECT OF PHOTOMASK
摘要 PURPOSE:To reduce the man-power of correction and to shorten the correction time by irradiating an absence defective part of the photomask with an electron beam in an atmosphere of material gas, and depositing an opaque film of the decomposition product of the material gas on the absence defective part and thus making a correction. CONSTITUTION:While the pattern 33 of the photomask 23 and a projection image 34 of a rectangular slit 29 are observed simultaneously through an ocular lens 26, the position of the projection image 34 of the rectangular slit 29 is adjusted through a slit position moving mechanism 30 to align the projection images 33 and 34 to each other so that the projection image 34 covers the absence defective image 35 of the photomask 23 completely. The pattern surface 33 of the photomask 23 is irradiated so that the scanning position of the electron beam from an electron gun 9 is inside the projection image 34. The material gas (C6H6)2Cr is admitted to a subchamber 16 from an on-off valve 38 to deposit the light shield film of the decomposition product Cr or compound of Cr and carbon on the absence defective part 35, thus making a correction.
申请公布号 JPS6125146(A) 申请公布日期 1986.02.04
申请号 JP19840144479 申请日期 1984.07.13
申请人 HITACHI LTD 发明人 HONGO MIKIO;MIZUKOSHI KATSURO;MIYAUCHI TAKEOKI;YAMAGUCHI HIROSHI;SHIMASE AKIRA;HARAICHI SATOSHI
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027;H01L21/30 主分类号 G03F1/00
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