MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form a pattern with excellent reproducibility on a polyimide film preventing a side etching from happening in case of forming a contact hole by oxygen plasma etching process by a method wherein an oxygen resisting plasmatic film e.g. a silicon nitride film is ladi between a polyimide film and a photoresist. CONSTITUTION:A substrate 1 is spin-coated with a polyimide film 2 which is coated with a silicon nitride film 5 by meand of plasma CVD process and the film 5 is further coated with a photoresist 3 to form an opening 4. The silicon nitride film 5 as a masking layer of the polyimide film 2 directly below the photoresist opening 4 is removed by means of a parallel flat sheet type dryetching device utilizing the photoresist 3 as a mask to expose the polyimide film 2. The photoresist 3 on the exposed polyimide film 2 and the silicon nitride film 5 is removed by means of plasma etching process utilizing oxygen gas. Finally the residual silicon nitride film 5 on the polyimide film 2 is removed by means of plasma etching process utilizing Freon gas mixed with oxygen. Through these procedures, a contact hole may be formed precisely.