| 摘要 |
PURPOSE:To produce a semiconductor device subject to high yield, quality and reliability making bonding process feasible within excellent reducing atmosphere by a method wherein heating means is built in a frame stay member to prevent inert gas temperature from declining. CONSTITUTION:A heater block 10 with a heater 1 built in is formed of gas nozzles 12 jetting inert gas. A frame 13 fixed on the heater block 10 by a frame stay 14 is bonded in the status wherein overall frame is heated by heating process of heater block 10 as well as the frame stay 14 heated up to specified temperature by a hot plate 15. Resultantly the bonding process may be performed within the excellent reducing atmosphere to produce a semiconductor device with excellent quality and high reliability. |
