FORMING PROCESS OF SPUTTERED FILM

摘要

PURPOSE:To form an excellent sputtered film just like those formed by bias- sputtering process by a method wherein the sputtered film is formed by means of adding helium gas to argon gas. CONSTITUTION:When a sputtered film is formed utilizing helium added to argon gas by a magnetron type high frequency device as a sputtering gas assuming silicon dioxide to be a targer, it is recommended that the additive helium gas shall exceed 20vol% and the sputtering pressure shall not exceed 2mTorr in order to form an excellent film. Any disconnection from the second layer wiring 4 may be prevented from happening by means of utilizing a silicon dioxide film formed meeting said two requirements as an interlayer insulating film 3.