| 摘要 |
PURPOSE:To reduce the dispersion of the characteristics of a transistor having LDD structure by controlling the width of a low-concentration diffusion layer under the conditions of oxidation through which an oxide film is formed and conditions for heat treatment. CONSTITUTION:Oxide films 28, 28 and a gate electrode 29 are shaped through thermal oxidation at a high temperature in an oxidizing atmosphere while using a silicon nitride film pattern 25 on a polycrystalline silicon film pattern 24 and silicon nitride films 27 on the surfaces of N<-> type diffusion layers 26a, 26b as oxidation-resistant masks. N<+> type diffusion layers 30a, 30b are formed while employing the silicon nitride film pattern 25, the gate electrode 29 and the oxide films 28, 28 on the side wall of the gate electrode as masks. Accordingly, the width L of N<-> type diffusion layers 26a, 26b can be controlled with high accuracy, thus improving element characteristics. |
