| 摘要 |
PURPOSE:To enable the substrate block to be the common one to the matching circuit by a method wherein a metal thin plate is inserted between the dielectric substrate constituting the matching circuit and the substrate block. CONSTITUTION:The source electrode 9 of a microwave high-output FET8 is installed on a protrusion part 7 formed at the central part of a substrate block 6 consisting of oxygen free high conductivity copper. A gate electrode 12 and a drain electrode 15 are respectively connected to a first capacitor electrode 11 and a second capacitor electrode 14. The input matching circuit is constituted of the capacitor electrode 11, a capacitor electrode 18, a capacitor, which is formed of a thin metal plate 16, and the inductances of fine conductor wires 19 and 20. The capacitance of the matching circuit can be adjusted by changing the thickness of a dielectric 10 and the height of the installing surfaces of the electrodes 12 and 15 can be adjusted by changing the thickness of the thin plates 16 and 17. |
