| 摘要 |
PURPOSE:To prevent another exfoliation from occurring in order not to make a fall of an adhesive strength between a PSG film and a conductive film owing to forming of a connection hole at the time of a glass flow by forming the connection hole after forming the PSG film to cover a conductive film of a high melting point metal film or a silicide film and performing a glass flow. CONSTITUTION:After a MISFET consisting of a semiconductor substrate 1, an insulating film 3, a conductive film 4 and a pair of and a double structure of semiconductor regions 5 and 6 is almost completed, an insulating film 7 is formed to cover at least the conductive film 4. An insulating film 8 flattening an upper part of the insulating film is formed through the glass flow process after this. Connection holes 9A and 9B are formed by eliminating the insulating films 7 and 8 of the designated upper part of the conductive film 4 and insulating films 3, 7 and 8 of the designated upper part of a semiconductor region 6 after then. Though an adhesive strength between the insulating film 7 and an molybdenum silicide film 4B divided with dotted lines decreases, another exfoliation does not occur because of forming connection holes 9A and 9B after performing a glass flow. |
