| 摘要 |
PURPOSE:To prevent a facet from generating, and moreover, to perform a microscopic and deep element isolation by a method wherein a thin insulating film is buried in the single crystal silicon substrate at each end of the insulating film patterns formed in the surface of the substrate deeper than at the other part, and moreover, a single crystal silicon film is flatly formed between the insulating film patterns. CONSTITUTION:An insulating film 9 is formed in the thickness necessary for making the device and after a patterning is performed on this insulating film 9, an etching is further performed on a silicon substrate 5 to form an opening part with the desired depth. Then, a thin insulating film 10 is formed on the sidewall only of the opening part. When the insulating film 10 is selectively and epitaxially grown, the thin sidewall insulating film 10 does not generate a large interfacial stress between the silicon substrate 5 and the film 110 and any facet is never generated from the edge of the film 10. When the selectively and epitaxially grown surface reaches the interface between the field insulating film and the silicon substrate, the grown surface is subjected to the effect of stress to generate at the pattern edges, but the generation of a facet is suppressed by the sidewall insulating film 10. |
