SEMICONDUCTOR MEMORY AND MANUFACTURE OF THE SAME

摘要

PURPOSE:To realize high packing density of memory cell by arranging in series in the depth direction a transistor and a capacitor at the side surface of groove formed on the main surface of a semiconductor substrate. CONSTITUTION:Not only a capacitor 14 but also a transistor forming a single memory cell are formed vertically within the groove in series in the depth direction. Thereby, the gate length of transfer gate 13 can be set in the sufficient length in order to suppress a sub-threshold lead current without giving influence on the memory cell area, while the channel length can also be set in the sufficient length without preventing high packing density of memory cell.