| 摘要 |
PURPOSE:To achieve high packing density and obtain satisfactory characteristics through the stacking structure by defining materials of active layers, source electrodes and drain electrode gates of the first and second field effect transistors. CONSTITUTION:A single crystal semiconductor active layers 11 and 11' of the field effect transistors Q1 and Q2 are composed of an n type GaAs layer, and the source electrodes 12, 12' and drain electrodes 13, 13' are formed by the n<++> type single crystal Ge layer. Moreover, the single crystal semiconductor layers 15, 15' at the gates 14, 14' are formed by the n type GaAs system layer consisting of GaAs or AlGaAs, while the single crystal semiconductor layers 16, 16' are formed by the n<+> type GaAs system layer having different composition from that of single crystal semiconductor layers 15, 15'. In this case, the single crystal semiconductor layers 16, 16' are composed of GaAs while the single crystal semiconductor layers 15, 15' are composed of AlGaAs. |
